Strained Silicon On Insulator Wafers

This process allows a larger window for thermal treatments.

Strained silicon on insulator wafers.

A si 0 0 1 wafer containing relaxed sige today usually. For both structures the silicon will be strained in tension by a so called virtual substrate i e. The thicknesses of the si sige stacks are ranging from 40 to 80 nm hence suited to partially depleted soi architectures while. This gives rise to a highly nonequilibrium laser process and can vary significantly to that in normal bulk silicon substrate.

The process starts with a virtual substrate having a thin strained silicon layer grown on top of a thick sige buffer. Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard soi and or bulk like strained si layers. In combination with modified insulator layers also improvements of the electrical properties and optimized. For the wafer bonding which will be reported in this paper two final structures can be realized strained silicon on sgoi or strained silicon directly on insulator ssoi.

The strained silicon sige substrate and silicon on insulator soi system comprises a thermal insulating layer which prevents a good thermal dissipation pathway. In the second case the strained si layer is placed between the si 1 x ge x layer and the buried oxide which leads after selective etching of the sige layer to a strained silicon on insulator wafer ssoi fig. Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard soi wafers and or bulk like strained si layers. Recently obtained sige free strained silicon on insulator by transferring strained si grown on relaxed sige buffer layers onto an oxide layer 3.

Semiconductor wafer direct bonding combined with mechanical grinding of the donor wafer and chemical etching of the remaining silicon as well as the sige layer is an alternative to the hydrogen induced layer transfer hilt. The virtual substrate was bonded to an oxidized silicon wafer.